Method for forming salicide in semiconductor device

ABSTRACT

Disclosed is a method for forming salicide in a semiconductor device. The method comprises the steps of: forming a first and a second gate oxide film and in a non-salicide region and a salicide region, the first gate oxide film being thicker than the second gate oxide film; forming a conductive layer and a nitride based hard mask layer, and then selectively removing the conductive layer, the hard mask layer, the first gate oxide film, and the second gate oxide film, thereby forming gate electrodes and simultaneously exposing an active region of the salicide region; forming a spacer oxide film on an upper surface, except for the hard mask layer, of a second resultant structure; selectively removing the spacer oxide film, thereby forming a spacer and simultaneously exposing the active region of the salicide region; removing the hard mask layer; and forming a salicide film on the upper surfaces of the gate electrodes and on the surface of the active region in the salicide region. Therefore, a non-salicide region and a salicide region can be formed selectively and simultaneously in a one-chip semiconductor device, so that the number of steps for a salicide forming process can be reduced.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the invention

[0002] The present invention relates to a method for forming salicide in a semiconductor device, and more particularly to a method for forming salicide in a semiconductor device, which can selectively and simultaneously form salicide region (or Co-salicide region) and a non-salicide region (or non-Co-salicide in a one-chip semiconductor device.

[0003] 2. Description of the Prior Art

[0004] The conventional method for forming salicide in a semiconductor device will be described as follows with reference to FIGS. 1A through 1E.

[0005]FIGS. 1A through 1E are cross-sectional views showing a conventional process of forming salicide in a semiconductor device.

[0006] According to a conventional salicide forming method of a semiconductor device, as shown in FIG. 1A, a gate oxide film 13 and a gate electrode 15 are sequentially formed on a silicon substrate 11 including a non-salicide region and a salicide region. Then, an LDD spacer 17 is formed on one side of the gate oxide film 13 and the gate electrode 15.

[0007] Next, as shown in FIG. 1B, an oxide film 19 is deposited on the upper surface of the resultant structure obtained through the above process, and then a photosensitive material layer 21 or a bottom anti-reflective coating (BARC) is formed in the non-salicide region A of the substrate. The oxide film 19 serves later as a barrier oxide film which prevents the generation of salicide in the non-salicide region during a salicide generating process.

[0008] Subsequently, as shown in FIG. 1C, an etch-back process is performed to the photosensitive material layer 21, and the photosensitive material layer 21 is removed. When the etch-back process of the photosensitive material layer 21 is performed, activated plasma, such as CHF₃/CF₄/O₂/Ar, and the likes, is used. In addition, N₂ gas, CxFy gas, such as C₄F₈, C₂F₆, and C₅F₈, and the likes can be used. Also, while the etch-back process of the photosensitive material layer 21 is performed, an etching process progresses to the oxide film 19 located on the gate electrode 15 so that there is no residual oxide film on the gate electrode 15.

[0009] Next, as shown in FIG. 1D, a photosensitive pattern 23 is formed on the non-salicide region A. Then, after the oxide film 19 located in the salicide region B of the substrate is selectively removed using the photosensitive pattern 23 as a mask, the photosensitive pattern 23 is removed. At this time, etching of a portion of the oxide film 19 is performed using activated plasma of CHF₃/CF₄/O₂/Ar, etc. In addition, N₂ gas and CxFy gas, such as C₄F₈, C₂F₆, and C₅F₈, and the likes can be used.

[0010] Subsequently, as shown in FIG. 1E, salicide (or Co-salicide) 25 is formed on the exposed portion of the gate electrode 15 in the non-salicide region A, and on the exposed portions of the silicon substrate 11 and the gate electrode 15 in the salicide region B. At this time, in the non-salicide part, salicide (or Co-salicide) is not generated due to a residual oxide barrier.

[0011] In accordance with the conventional method described above, -after an LDD structure is formed, an oxide film formed in the salicide region is removed by using a photosensitive pattern as a barrier. Subsequently, after the photosensitive pattern is removed, a salicide layer is formed, so that steps of the salicide forming process are increased.

SUMMARY OF THE INVENTION

[0012] Accordingly, the present invention has been made to solve the above-mentioned problems occurring in the prior art, and an object of the present invention is to provide a method for forming salicide in a semiconductor device, which can selectively and simultaneously form a salicide region (or Co-salicide region) and a non-salicide region (or non-Co-salicide region) in a one-chip semiconductor device, thereby enabling steps of the salicide forming process to be reduced.

[0013] In order to accomplish this object, there is provided a method for forming salicide in a semiconductor device, the method comprising the steps of: (1) forming a first gate oxide film and a second gate oxide film in a non-salicide region and a salicide region of a silicon substrate, respectively, the first gate oxide film being thicker than the second gate oxide film; (2) forming a conductive layer and a nitride based hard mask layer on an upper surface of a first resultant structure obtained through step (1), and then selectively removing the conductive layer, the hard mask layer, the first gate oxide film, and the second gate oxide film, thereby forming gate electrodes respectively in the non-salicide region and the salicide region and simultaneously exposing an active region of the salicide region; (3) forming a spacer oxide film on an upper surface, except for the hard mask layer, of a second resultant structure obtained through steps (1) to (2); (4) selectively removing the spacer oxide film, thereby forming a spacer on one side of each of the gate electrodes and simultaneously exposing the active region of the salicide region; (5) removing the hard mask layer remaining on upper surfaces of the gate electrodes in the non-salicide region and the salicide region; and (6) forming a salicide film on the upper surfaces of the gate electrodes in the non-salicide region and the salicide region and on the surface of the active region in the salicide region.

[0014] In accordance with another aspect of the present invention, there is provided a method for forming salicide in a semiconductor device, the method comprising the steps of: (1) forming a first gate oxide film and a second gate oxide film in a non-salicide region and a salicide region of a silicon substrate, respectively, the first gate oxide film being thicker than the second gate oxide film; (2) forming a conductive layer on an upper surface of a first resultant structure obtained through step (1), and then selectively removing the conductive layer, the first gate oxide film, and the second gate oxide film, thereby forming gate electrodes respectively in the non-salicide region and the salicide region and simultaneously exposing an active region of the salicide region; (3) forming an ONO thin film and a nitride film on an upper surface of a second resultant structure which has been obtained through steps (1) to (2) and includes the gate electrodes; (4) selectively removing the ONO thin film and the nitride film located in the salicide region; (5) removing the nitride film remaining in the salicide region and forming a spacer on one side of each of the gate electrodes; and (6) forming a salicide film on the upper surfaces of the gate electrodes in the non-salicide region and the salicide region and on the surface of the active region in the salicide region.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0016]FIGS. 1A through 1E are cross-sectional views showing a conventional process of forming salicide in a semiconductor device;

[0017]FIGS. 2A through 2G are cross-sectional views showing a process of forming salicide in a semiconductor device according to one embodiment of the present invention; and

[0018]FIGS. 3A through 3F are cross-sectional views showing a process of forming salicide in, a semiconductor device according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. In the following description and drawings, the same reference numerals are used to designate the same or similar components, and so repetition of the description on the same or similar components will be omitted.

[0020]FIGS. 2A through 2F are cross-sectional views showing a process of forming salicide in a semiconductor device according to one embodiment of the present invention.

[0021] According to a method for forming salicide in a semiconductor device of the present invention, as shown in FIG. 2A, first, a dual gate oxide film including a thick gate oxide film 33 a and a thin gate oxide film 33 b is formed on the surface of a silicon substrate 31. The surface of the silicon substrate 31 is divided into a non-salicide region A and a salicide region. At this time, the thick gate oxide film 33 a is formed on the non-salicide region A and the thin gate oxide film 33 b is formed on the salicide region B.

[0022] Next, a polysilicon layer 35 for gate formation and a nitride based hard mask layer 37 are deposited on the dual gate oxide film, and then a first photosensitive pattern 39 for patterning the polysilicon layer 35 is formed thereon. The first photosensitive pattern 39 is formed on the non-salicide region A and the salicide region B, respectively.

[0023] Subsequently, as shown in FIG. 2B, the polysilicon layer 35 and the hard mask layer 37 are selectively removed using the first photosensitive pattern 39 as a mask, so as to form gate electrodes 35 a and 35 b. When the nitride based hard mask layer is primarily etched, activated plasma, such as CHF₃/CF₄/O₂/Ar, or C₄F₈/O₂/Ar, is used. In addition, N₂ gas, CxFy gas, such as C₄F₈, C₂F₆, and C₅F₈, and the likes can be used. Here, flow rates of etching gases are as follows; CHF₃: 1˜200 sccm, CF₄: 1˜200 sccm, O₂: 0˜20 sccm, and Ar: 1˜1000 sccm. Besides these, C₄F₈ of 1˜50 sccm and N₂ of 0˜500 sccm may be used as etching gases.

[0024] Secondarily, the polysilicon layer 35 is etched, activated plasma, such as Cl₂/HBr/He—O₂/Ar and the likes, is used.

[0025] When the etching to form the gate electrodes is performed as described above, a gate electrode pattern is formed on the thin gate oxide film of the salicide region B, and the oxide film of an active region is etched to expose the surface of the silicon substrate. In contrast, a part of the thick gate oxide film in the non-salicide region B remains even after the gate electrode pattern has been formed. This is because the etching selectivity of the polysilicon layer to the oxide film is about 200˜300 to 1.

[0026] Next, the first photosensitive pattern 39 is removed, and then an oxidation process is performed on the surface of a resultant structure obtained through the above process to form an oxide film 41 thereon. Herein, the oxide film 41 is formed to protect a thick gate oxide film 33 a remaining in an active region of the non-salicide region while etching of an LDD spacer is performed in a following step. Although an oxide film is grown over a resultant structure obtained through the above process, the oxide film 41 is not grown on the nitride based hard mask layer 37 located on the gate electrodes 35 a and 35 b. Therefore, when an LDD oxide film is deposited in a following step, the thickness of the oxide film on the polysilicon layer is equal to the thickness of the deposited LDD oxide film, while the thickness of the oxide film remaining in the active region of the non-salicide region is the sum of thickness of the thick gate oxide film and the deposited LDD oxide film, so that the thick gate oxide film 33 a is protected while etching of an LDD spacer is performed in a following step.

[0027] Subsequently, as shown in FIG. 2C, an LDD oxide film 43 is deposited on a resultant structure obtained through the above process.

[0028] Next, as shown in FIG. 2D, blanking etching of the LDD oxide film 43 is performed to form a spacer 43 a on one side of each of the gate electrodes 35 a and 35 b. When the LDD oxide film 43 is etched, activated plasma, such as CHF₃/CF₄/O₂/Ar, or C₄F₈/O₂/Ar, is used. In addition, N₂, O₂, and CxFy such as C₄F₈, C₂F₆, C₅F₈, and the likes can be used. That is, an etching of the LDD oxide film 43 can be performed using activated plasma of CHF₃/CF₄/O₂/Ar. In addition, N₂ gas and CxFy gas such as C₄F₈, C₂F₆, C₅F₈ can be used. Here, each flow rate of the etching gases is as follows; CHF₃: 1˜200 sccm, CF₄: 1˜200 sccm, O₂: 0˜20 sccm, and Ar: 1˜1000 sccm. Besides these, C₄F₈ of 1˜50 sccm and N₂ of 0˜500 sccm may be used as etching gases.

[0029] When an etching step is performed as described above, the surface of an active region in the salicide region B of the silicon substrate is exposed. In contrast, on the surface of an active region in the non-salicide region A of the silicon substrate, a remaining oxide film continuously remains.

[0030] Subsequently, as shown in FIG. 2E, a hard mask layer pattern 37 a remaining on the upper surfaces of the gate electrodes 35 a and 35 b is etched by a down flow method using an O2/CF4 gas. When etching is performed by such a down flow method, the etching selectivity of the nitride film to the oxide film becomes about 12:1. Therefore, since oxide film is nearly not removed, the oxide film located on the active region of the non-salicide region A remains, and -the upper surfaces of the gate electrodes and the silicon substrate, on which a nitride film has existed, are exposed.

[0031] Next, as shown in FIG. 2G, salicide films 45 are formed on the exposed upper surfaces of the gate electrodes 35 a and 35 b and the exposed surfaces of the active region of the salicide region B.

[0032] Meanwhile, a method for forming salicide in a semiconductor device according to another embodiment of the present invention will be described as follows with reference to FIGS. 3A through 3G.

[0033]FIGS. 3A through 3G are, cross-sectional views showing a process of forming salicide in a semiconductor device according to another embodiment of the present invention.

[0034] According to a method for forming form salicide in a semiconductor device of the present invention, as shown in FIG. 3A, first, a dual gate oxide film including a thick gate oxide film 53 a and a thin gate oxide film 53 b is formed on the surface of a silicon substrate 51. Herein, the surface of the silicon substrate 51 is divided into a non-salicide region A and a salicide region B. At this time, the thick gate oxide film 53 a is formed on the non-salicide region A and the thin gate oxide film 53 b is formed on the salicide region B.

[0035] Next, a polysilicon layer 55 for gate formation is deposited on the dual gate oxide film, and then a first photosensitive pattern 57 for patterning the polysilicon layer 55 is formed thereon. At this time, the first photosensitive pattern 57 is formed in the non-salicide region A and the salicide region B, respectively.

[0036] Subsequently, as shown in FIG. 3B, the polysilicon layer 55 is selectively removed using the first photosensitive pattern 57 as a mask, so as to form gate electrodes 55 a and 55 b.

[0037] Next, after the first photosensitive pattern 57 is removed, an ONO thin film 59 and a nitride film 61 are stacked on the upper surface of a resultant structure, which has been obtained through the above process and includes the gate electrodes 55 a and 55 b. Thereafter, a second photosensitive pattern 63 is formed only on the non-salicide region A.

[0038] Subsequently, as shown in FIG. 3C, the nitride film 61 and the ONO thin film 59, which are located in the salicide region B, are removed (by) using the second photosensitive pattern 63 as a mask. When the nitride film 41 and the ONO thin film 59 are etched, activated plasma, such as CHF₃/CF₄/O₂/Ar or so forth, is used. In addition, N₂ gas and CxFy gas such as C₄F₈, C₂F₆, C₅F₈, and the likes can be used. Here, each flow rate of the etching gases is as follows; CHF₃: 1˜200 sccm, CF₄: 1˜200 sccm, O₂: 0˜20 sccm, and Ar: 1˜1000 sccm. Besides these, C₄F₈ of 1˜50 sccm and N₂ of 0˜500 sccm may be used as etching gases.

[0039] Next, the second photosensitive pattern 63 is removed by means of either O₂ plasma or an O₂ down flow method.

[0040] Subsequently, as shown in FIG. 3D, a blanket etching is performed by a down flow method, so as to selectively remove the remaining nitride film 61 and ONO thin film 59. At this time, the etching of the nitride film is performed by a down flow method using O₂/CF₄ gas. When etching is performed by a down flow method as described above, the etching selectivity of the nitride film to the oxide film becomes about 12:1. Therefore, since oxide film is nearly not removed, ‘ON’ portion of the ONO thin film 59 is removed, and only ‘O (Oxide)’ portion thereof remains.

[0041] Next, as shown in FIG. 3E, an oxide film 65 for forming an LDD structure is deposited on the upper surface of a resultant structure obtained through the above process.

[0042] Subsequently, as shown in FIG. 3F, the oxide film 65 is dry-etched to form a spacer 65 a on one side of each of the gate electrodes 55 a and 55 b. When the oxide film 65 is etched, activated plasma, such as CHF₃/CF₄/O₂/Ar, or C₄F₈/O₂/Ar, or so forth. In addition, N₂, O₂, and CxFy such as C₄F₈, C₂F₆, C₅F₈, and the likes can be used. That is, etching of the oxide film 65 can be performed using activated plasma of CHF₃/CF₄/O₂/Ar. Herein, N₂ gas and CxFy gas, such as C₄F₈, C₂F₆, C₅F₈, can be used. Here, each flow rate of the etching gases is as follows; CHF₃: 1˜200 sccm, CF₄: 1˜200 sccm, O₂: 0˜20 sccm, and Ar: 1˜1000 sccm. Besides these, C₄F₈ of 1˜50 sccm and N₂ of 0˜500 sccm may be used as etching gases.

[0043] When such an etching process is performed, the oxide layer continuously remains in the active region of the non-salicide region A, without leaving the oxide layer on both surface of the active region of the salicide region B and upper surfaces of the gate electrodes.

[0044] Next, as shown in FIG. 3G, salicide films 67 are formed on the exposed upper surfaces of the gate electrodes 35 a and 35 b and the exposed surfaces of the active region of the salicide region B.

[0045] According to the method for forming salicide in the semiconductor device of the present invention, it is not required to perform an etch back process for the photosensitive film (or BARC), so contamination caused by particles can be reduced during the salicide forming process.

[0046] Also, according to the method of the present invention, different from the conventional method, the LDD spacer can be separately formed in the non-salicide region (or Co-salicide region) and the salicide region.

[0047] Also, salicide can be selectively formed in the non-salicide region and the salicide region.

[0048] Although a preferred embodiment of the present invention has been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. 

What is claimed is:
 1. A method for forming salicide in a semiconductor device, the method comprising the steps of: (1) forming a first gate oxide film and a second gate oxide film in a non-salicide region and a salicide region of a silicon substrate, respectively, the first gate oxide film being thicker than the second gate oxide film; (2) forming a conductive layer and a nitride based hard mask layer on an upper surface of a first resultant structure obtained through step (1), and then selectively removing the conductive layer, the hard mask layer, the first gate oxide film, and the second gate oxide film, thereby forming gate electrodes respectively in the non-salicide region and the salicide region and simultaneously exposing an active region of the salicide region; (3) forming a spacer oxide film on an upper surface, except for the hard mask layer, of a second resultant structure obtained through steps (1) to (2); (4) selectively removing the spacer oxide film, thereby forming a spacer on one side of each of the gate electrodes and simultaneously exposing the active region of the salicide region; (5) removing the hard mask layer remaining on upper surfaces of the gate electrodes in the non-salicide region and the salicide region; and (6) forming a salicide film on the upper surfaces of the gate electrodes formed in the non-salicide region and the salicide region, and on the surface of the active region in the salicide region.
 2. The method as claimed in claim 1, wherein an etching process for the hard mask layer and the conductive layer includes first and second etching steps.
 3. The method as claimed in claim 2, wherein when the second etching step for the conductive layer is performed, activated plasma including Cl₂/HBr/He—O₂/Ar is used.
 4. The method as claimed in claim 1, wherein the hard mask layer has a thickness of 1˜500 Å.
 5. The method as claimed in claim 1, wherein etching gases used for etching the spacer oxide film and flow rates thereof are CHF₃: 1˜200 sccm, CF₄: 1˜200 sccm, O₂: 0˜20 sccm, Ar: 1˜1000 sccm, C₄F₈: 1˜50 sccm and N₂: 0˜500 sccm.
 6. The method as claimed in claim 1, wherein an etching process of the hard mask layer is performed by a down flow method with using O₂/CF₄ as etching gas.
 7. A method for forming salicide in a semiconductor device, the method comprising the steps of: (1) forming a first gate oxide film and a second gate oxide film in a non-salicide region and a salicide region of a silicon substrate, respectively, the first gate oxide film being thicker than the second gate oxide film; (2) forming a conductive layer on an upper surface of a first resultant structure obtained through step (1), and then selectively removing the conductive layer, the first gate oxide film, and the second gate oxide film, thereby forming gate electrodes respectively in the non-salicide region and the salicide region and simultaneously exposing an active region of the salicide region; (3) forming an ONO thin film and a nitride film on an upper surface of a second resultant structure which has been obtained through steps (1) to (2) and includes the gate electrodes; (4) selectively removing the ONO thin film and the nitride film located in the salicide region; (5) removing the nitride film remaining in the salicide region and forming a spacer on one side of each of the gate electrodes; and (6) forming a salicide film on the upper surfaces of the gate electrodes in the non-salicide region and the salicide region and on the surface of the active region in the salicide region.
 8. The method as claimed in claim 7, wherein a thickness of the first gate oxide film is 100˜300 Å and a thickness of the second gate oxide film is 1˜150 Å.
 9. The method as claimed in claim 7, wherein the ONO thin film comprises a first oxide film having a thickness of 0˜200 Å, a nitride film having a thickness of 0˜500 Å, and a second oxide film having a thickness of 0˜200 Å.
 10. The method as claimed in claim 7, wherein the etching of the nitride film and the ONO thin film in the salicide region is performed using activated plasma of CHF₃/CF₄/O₂/Ar.
 11. The method as claimed in claim 10, wherein etching gases used for the etching and flow rates thereof are CHF₃: 1˜200 sccm, CF₄: 1˜200 sccm, O₂: 0˜20 sccm, Ar: 1˜1000 sccm, C₄F₈: 1˜50 sccm and N₂: 0˜500 sccm.
 12. The method as claimed in claim 7, wherein the etching of the nitride film is performed by a down flow method and using O₂/CF₄ as etching gas. 